w nmd 6003 dual n - channel, 60v, 0.3 0 a, power mosfet descriptions the WNMD6003 is dual n - channel enhancem - ent mos field effect transistor. uses advanced trench technology and design to provide ex cellent r ds (on) with low gate charge. this device is suitable for use in dc - dc conversion , p ower switch and charging circuit . standard product WNMD6003 is pb - free and halogen - free . features ? trench technology ? supper high density cell design ? e xcellent o n resistance for higher dc current ? extremely low threshold voltage ? small package sot - 563 applications ? driver for relay, solenoid, motor, led etc. ? dc - dc converter circuit ? power switch ? load switch ? charging sot - 563 pin c onfiguration (top view) 60 = device code * = month (a~z) marking order i nformation device package shipping WNMD6003 - 6 /tr sot - 563 3000 /reel&tape d1 6 g2 5 s2 4 1 s1 2 g1 3 d2 60* 5 64 1 23 v ds (v) rds(on) ( ) 60 1.4 @ v gs =10 v 1.7 @ v gs =4 .5v e s d r a t i n g : 2 0 0 0 v h b m 1 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings thermal r esistance ratings a surface mounted on fr - 4 board using 1 square in ch pad size, 1oz copper . b surface mounted on fr - 4 bo ard using minimum pad size, 1oz copper . c pulse width <38 0s . d maximum junction temperature t j =1 50 c . parameter symbol 10 s steady state unit drain - source vo ltage v ds 60 v gate - source voltage v gs 20 continuous drain current a d t a =25c i d 0.30 0.27 a t a =70c 0.24 0.21 maximum power dissipation a d t a =25c p d 0.37 0.29 w t a =70c 0.23 0.18 continuous drain current b d t a =25c i d 0.26 0.23 a t a =70c 0.20 0.19 maximum power dissipation b d t a =25c p d 0.27 0.22 w t a =70c 0.17 0.14 pulsed drain current c i dm 1.0 a operating junction temperature t j - 55 to 150 c lead temperature t l 260 c storage temperature range t stg - 55 to 150 c parameter symbol typical maximum unit junction - to - ambient thermal resistance a t 10 s r ja 285 335 c/w steady state 3 4 0 430 junction - to - ambient thermal resistance b t 10 s r ja 380 460 steady state 465 555 junction - to - case thermal resistance steady state r jc 280 320 w nmd 6003 2 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electronics characteristics (ta=25 o c , unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain - to - source breakdown voltage b v dss v gs = 0 v, i d = 250 u a 60 v zero gate voltage drain current i dss v ds = 60v , v gs = 0v 1 ua gate - t o - s ource leakage current i gss v ds = 0 v, v gs = 20 v 5 u a on characteris tics gate threshold voltage v gs(th) v gs = v ds , i d = 2 5 0 u a 0.8 1.3 2 v drain - t o - s ource on - r esistance b, c r ds(on) v gs = 10 v , i d = 0. 3 a 1.4 2. 0 ? v gs = 4 .5 v , i d = 0.2 a 1 .7 2. 6 forward transconductance g fs v ds =15 v, i d =0.25 a 0. 42 s capacitances , charges input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = 25 v 2 3.37 pf output capacitance c oss 7.33 reverse transfer capacitance c rss 5.2 total gate charge q g(tot) v gs = 10 v, v dd = 30 v, i d = 0.37 a 1.2 nc threshold gate charge q g(th) 0. 15 gate - to - source charge q gs 0. 21 gate - to - drain charge q gd 0. 12 switching characteristics turn - on delay time td(on) v dd =30v,r l =150 ? i d =0.2a,v gen =10v, r g =10 ? 7.6 ns rise time tr 5.1 turn - off delay time td(off) 24.6 fall time tf 10 body diode characteristics forward voltage v sd v gs = 0 v, i s = 0.3 a 0.9 1.5 v w nmd 6003 3 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (ta=25 o c, unless otherwise noted) output c haracteristics on - r esistance vs. d rain c urrent on - resistance vs. junction temperature transfer c haracteristics on - resistance vs. gate - to - source voltage threshold voltage vs. temperature -50 0 50 100 150 0.6 0.8 1.0 1.2 normalized gate threshold voltage temperature ( o c) i d =2 5 0 u a -50 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 v gs =10v i d =0.30a r ds(on) -on-resistance nomalized temperature( o c) 2 4 6 8 10 1 2 3 4 5 i d =0.3a r ds(on) - on-resistance ( ? ) v gs -gate-to-source voltage(v) 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 5 v gs =4.5v v gs =10v i d -drain current(a) r ds(on) - on-resistance ( ? ) transfer c haracteristics 0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 t=-50 o c t=25 o c t=125 o c i ds -drain to source current(a) v gs -gate-to-source voltage(v) v ds =5v 0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 v gs =3v v gs =6v, 8v , 10v v gs =4.5v i ds -drain-to-source current (a) v ds -drain-to-source voltage(v) v gs =3.5v w nmd 6003 4 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification -50 -25 0 25 50 75 100 125 150 0.7 0.8 0.9 1.0 1.1 1.2 v gs(th) -gate threshold voltage normalized temperature ( o c ) i d =250ua -50 0 50 100 150 0.6 0.8 1.0 1.2 normalized gate threshold voltage temperature ( o c) i d =-250ua -50 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 v gs =10v i d =0.37a r ds(on) -on-resistance nomalized temperature( o c) 0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v gs =6v,8v,10v v gs =4.5v i ds -drain-to-source current (a) v ds -drain-to-source voltage(v) v gs =3.5v 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 5 v gs =4.5v v gs =10v r ds(on) -on-resistance ( ? i d -drain current(a) -50 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 v gs =10v i d =0.30a r ds(on) -on-resistance nomalized temperature( o c) 2 4 6 8 10 1 2 3 4 5 i d =0.3a r ds(on) - on-resistance ( ? ) v gs -gate-to-source voltage(v)
capacitance single pulse power body diode forward voltage safe operating power gate charge characteristics 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 v dd =30v i d =0.37a v gs -gate-to-source voltage(v) q g (nc) 0 5 10 15 20 25 0 5 10 15 20 25 30 35 40 c(pf) ciss coss crss 0.1 1 10 100 1e-3 0.01 0.1 1 1ms 10ms 100ms 1s 10s dc bvdss limit ta=25 ? c single pulse i d - drain current (a) v ds - drain source voltage (v) limit by rdson* 0.4 0.6 0.8 1.0 1.2 1e-3 0.01 0.1 1 i sd -source-to-drain current(a) v sd -source-to-drain voltage(v) -50 o c 25 o c 85 o c 125 o c 150 o c v sd (v) w nmd 6003 5 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 v dd =30v i d =0.37a v gs -gate-to-source voltage(v) q g (nc) 0 5 10 15 20 25 0 5 10 15 20 25 30 35 40 c(pf) vds(v) ciss coss crss 0.1 1 10 100 1e-3 0.01 0.1 1 1ms 10ms 100ms 1s 10s dc bvdss limit ta=25 ? c single pulse i d - drain current (a) v ds - drain source voltage (v) limit by rdson* 0.4 0.6 0.8 1.0 1.2 1e-3 0.01 0.1 1 i sd -source-to-drain current(a) v sd -source-to-drain voltage(v) -50 o c 25 o c 85 o c 125 o c 150 o c
t ransient thermal r esponse (junction - to - ambient) 10 -3 10 -2 0 0 6 0 1 1 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 340 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm w nmd 6003 6 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimensions sot - 563 w nmd 6003 7 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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